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| SEMICONDUCTOR TECHNICAL DATA General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. D KMB7D0NP30QA N and P-Ch Trench MOSFET H T P G L FEATURES N-Channel : VDSS=30V, ID=7A. : RDS(ON)=23.5m (Max.) @ VGS=10V : RDS(ON)=39m (Max.) @ VGS=4.5V P-Channel : VDSS=-30V, ID=-5A. : RDS(ON)=45.5m (Max.) @ VGS=-10V : RDS(ON)=80m (Max.) @ VGS=-4.5V Super High Dense Cell Design. Reliable and rugged. 1 4 B1 B2 8 5 A DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range (note1) ) SYMBOL VDSS VGSS I D* IDP IS PD* Tj Tstg RthJA* N-Ch 30 22 7 29 1.7 2 150 -55 150 62.5 /W P-Ch -30 22 -5 A -20 -1.7 A W UNIT V V Thermal Resistance, Junction to Ambient Note : *Sorface Mounted on FR4 Board PIN CONNECTION (TOP VIEW) D1 D1 S2 S1 G1 S2 G2 1 8 D1 D1 D2 G1 G2 2 7 3 6 4 5 D2 S1 D2 D2 N-Channel MOSFET P-Channel MOSFET 2007. 6. 28 Revision No : 2 1/9 KMB7D0NP30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V, ID=-250 A, VGS=0V, VGS=0V, VDS=24V Drain Cut-off Current IDSS VGS=0V, VDS=-24V Gate Leakage Current IGSS VGS= 22V, VDS=0V P-Ch Gate Threshold Voltage Vth VDS=VGS, ID=250 A VDS=VGS, ID=-250 A VGS=10V, ID=7A Drain-Source ON Resistance RDS(ON)* VGS=-10V, ID=-5A VGS=4.5V, ID=6A VGS=-4.5V, ID=-4A ON State Drain Current ID(ON)* VGS=4.5V, VDS=5V VGS=-10V, VDS=-5V VDS=5V, ID=6.6A VDS=-5V, ID=-5A IS=1.7A, VGS=0V IS=-1.7A, VGS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 20 -20 18 35 30 62 10 9 0.7 -0.8 100 3 V -3 23.5 45.5 m 39 80 A S 1.2 V -1.2 P-Ch N-Ch -1 100 nA N-Ch P-Ch N-Ch 30 -30 V 1 A SYMBOL ) TEST CONDITION MIN. TYP. MAX. UNIT Forward Transconductance gfs* Source-Drain Diode Forward Voltage VSD* 2007. 6. 28 Revision No : 2 2/9 KMB7D0NP30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Dynamic N-Ch : VDS=15V, ID=6.6A, VGS=10V (Fig.1) P-Ch : VDS=-15V, ID=-5A, VGS=-10V (Fig.3) Total Gate Charge Qg N-Ch : VDS=15V, ID=6.6A, VGS=4.5V P-Ch : VDS=-15V, ID=-5A, VGS=-4.5V Gate-Source Charge Qgs N-Ch (Fig.1) P-Ch (Fig.3) N-Ch P-Ch N-Ch P-Ch N-Ch Turn-on Delay time td(on) P-Ch Turn-on Rise time tr N-Ch : VDD=15V, ID=6.6A, VGS=10V, RG=3 (Fig.2) P-Ch : VDD=-15V, VGS=-10V, RG=3 , RL=2.7 (Fig.4) N-Ch P-Ch N-Ch P-Ch N-Ch Turn-off Fall time tf P-Ch N-Ch Input Capacitance Ciss P-Ch Output Capacitance Coss N-Ch : VDS=15V, VGS=0V, f=1.0MHz P-Ch : VDS=-15V, VGS=0V, f=1.0MHz N-Ch P-Ch N-Ch Reverse transfer Capacitance Note 1>* Pulse test : Pulse width 300 Crss P-Ch , Duty Cycle 2%. 89 820 126 137 76 pF 22.6 742 4.7 27.7 7.8 12.2 47.2 7.6 ns 4 2.6 2.6 2.9 7.4 6.25 7.8 7.2 9 nC N-Ch 16.4 20.5 SYMBOL ) TEST CONDITION MIN. TYP. MAX. UNIT P-Ch - 13 16 Gate-Drain Charge Qgd N-Ch : VDS=15V, ID=6.6A, VGS=10V (Fig.1) P-Ch : VDS=-15V, ID=-5A, VGS=-10V (Fig.3) Turn-off Delay time td(off) 2007. 6. 28 Revision No : 2 3/9 KMB7D0NP30QA N-Channel 20 Fig1. ID - VDS 25 VGS= 4V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 16 VGS = 10, 9, 8, 7, 6, 5V 20 15 10 Tj = -55 C Tj = 125 C 12 8 VGS= 3V 4 5 0 Tj = 25 C 0 0 1 2 3 4 5 6 0 0.8 1.6 2.4 3.2 4.0 4.8 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. Vth - Tj Normalized Threshold Voltage Vth (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 VDS = VGS IDS = 250A Fig4. IDR - VSD 20.0 Reverse Drain Current IDR (A) 10.0 1 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 Junction Temperature Tj ( C ) Source - Drain Voltage VSD (V) Fig5. RDS(ON) - Tj 2.2 VGS = 10V ID= 6.6A Fig6. C - VDS 1800 1600 Normalized On Resistance 1.8 1.4 1.0 0.6 0.4 Capacitance (pF) 1400 1200 1000 800 600 400 200 Coss Crss Ciss 0 -75 -50 -25 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 Junction Temperture Tj ( C ) Drain - Source Voltage VDS (V) 2007. 6. 28 Revision No : 2 4/9 KMB7D0NP30QA Fig7. Qg - VGS 12 Fig8. Safe Operation Area 102 Operation in this area is limited by RDS(ON) Gate - Source Voltage VGS (V) 10 8 6 4 2 0 0 VDS =15V ID = 6.6A Drain Current ID (A) 101 1ms 100 10ms 100ms 10-1 VGS= 10V SINGLE PULSE 1s 10s DC 2 4 6 8 10 12 14 16 18 10-2 10-1 100 101 102 103 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty Cycle = 0.5 0.2 PDM t1 t2 t1 10-1 0.1 0.05 0.02 Single Pluse 1. Duty Cycle, D = t2 2. Per Unit Base = RJA= 62.5 C/W 10-2 10-1 100 101 102 103 10-2 10-4 10-3 Square Wave Pulse Duration (sec) 2007. 6. 28 Revision No : 2 5/9 KMB7D0NP30QA P-Channel -20 Fig1. ID - VDS -25 VGS = -10,-9,-8,-7,-6,-5V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) -16 -12 -8 VGS = -4V -20 Tj=25 C -15 -10 -5 0 Tj= -55 C Tj=125 C VGS = -3V -4 0 0 1 -2 -3 -4 -5 -6 0 -0.8 -1.6 -2.4 -3.2 -4.0 -4.8 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. Vth - Tj Normalized Threshold Voltage Vth 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -20 Fig4. IDR - VSD Reverse Drain Current IDR (A) VDS = VGS ID = -250A -10 -50 -25 0 25 50 75 100 125 150 -1.0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Junction Temperature Tj ( C ) Source - Drain Voltage VSD (V) Fig5. RDS(ON) - Tj 2.2 1200 VGS = -10V ID = -5A Fig6. C - VDS Normalized On Resistance 1.8 1.4 1.0 0.8 0.4 0.0 -75 1000 Capacitance (pF) Ciss 800 600 400 Coss 200 Crss 0 -50 -25 0 25 50 75 100 125 150 0 -5 -10 -15 -20 -25 -30 Junction Temperture Tj ( C ) Drain - Source Voltage VDS (V) 2007. 6. 28 Revision No : 2 6/9 KMB7D0NP30QA Fig7. Qg - VGS -12 Fig8. Safe Operation Area 102 Gate - Source Voltage VGS (V) -10 -8 -6 -4 -2 VD = -15V ID = -5A Drain Current ID (A) 101 1ms 100 Operation in this area is limited by RDS(ON) 10-1 VGS= 10V SINGLE PULSE 10ms 100ms 1s 10s DC 0 0 2 4 6 8 10 12 14 10-2 10-1 100 101 102 103 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty Cycle = 0.5 0.2 PDM t1 t2 t1 10-1 0.1 0.05 0.02 Single Pluse 1. Duty Cycle, D = t2 2. Per Unit Base = RJA= 62.5 C/W 10-2 10-1 100 101 102 103 10-2 10-4 10-3 Square Wave Pulse Duration (sec) 2007. 6. 28 Revision No : 2 7/9 KMB7D0NP30QA N-Channel Fig. 1 Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig. 2 Resistive Load Switching RL td(on) ton tr td(off) toff tf 0.5 VDSS 3 VGS 90% VDS 10 V VGS VDS 10% 2007. 6. 28 Revision No : 2 8/9 KMB7D0NP30QA P-Channel Fig. 1 Gate Charge VGS -10 V Schottky Diode ID 0.5 VDSS 1.0 mA ID VDS VGS Q Qgs Qgd Qg Fig. 2 Resistive Load Switching RL td(on) ton tr td(off) toff tf 0.5 VDSS 3 VGS 10% VDS VGS -10 V VDS 90% 2007. 6. 28 Revision No : 2 9/9 |
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